AR
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HIVE INF
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RMATI
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ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 1200 mAdc)
VGS(Q)
?
3.8
?
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3 Adc)
VDS(on)
?
0.26
?
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 3 Adc)
gfs
?
7.5
?
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.7
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 26 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12
13
?
dB
Drain Efficiency
ηD
23
25
?
%
Intermodulation Distortion
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-51
-48
dBc
Input Return Loss
IRL
?
-15
-9
dB
1. Part internally matched both on input and output.
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